Development of large size crystal growth technology of oxide eutectic scintillator and a proto-type Talbot–Lau imaging system

Abstract Wafers of Tb-doped GdAlO 3 / ? -Al 2 O eutectic were fabricated by the micro-pulling-down method using an Ir crucible with a 25 × mm die. A prototype X-ray phase imaging detector was developed CMOS sensor fiber optic plate and wafer. spots 8.24 ? m period observed detector. nylon ball diameter 4 also carried out. It that change approximately occurs at air–nylon interface. This technique can be realized in absence absorption grating.